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PD - 9.1370C
IRL3705N
HEXFET(R) Power MOSFET
l l l l l l
Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 55V RDS(on) = 0.01
G S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
ID = 89A
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
89 63 310 170 1.1 16 340 46 17 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.50 ---
Max.
0.90 --- 62
Units
C/W
8/25/97
IRL3705N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS I GSS Qg Q gs Q gd t d(on) tr t d(off) tf LD LS Ciss Coss Crss
Min. 55 --- --- --- --- 1.0 50 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.056 --- --- --- --- --- --- --- --- --- --- --- --- 12 140 37 78 4.5 7.5 3600 870 320
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, I D = 1mA 0.010 VGS = 10V, ID = 46A 0.012 VGS = 5.0V, I D = 46A 0.018 VGS = 4.0V, I D = 39A 2.0 V VDS = VGS , ID = 250A --- S VDS = 25V, ID = 46A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 VGS = 16V nA -100 VGS = -16V 98 ID = 46A 19 nC VDS = 44V 49 V GS = 5.0V, See Fig. 6 and 13 --- VDD = 28V --- I D = 46A ns --- RG = 1.8, VGS = 5.0V --- RD = 0.59, See Fig. 10 Between lead, --- nH 6mm (0.25in.) G from package --- and center of die contact --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD t rr Q rr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol --- --- 89 showing the A G integral reverse --- --- 310 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 46A, VGS = 0V --- 94 140 ns TJ = 25C, IF = 46A --- 290 440 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD 46A, di/dt 250A/s, VDD V(BR)DSS, Pulse width 300s; duty cycle 2%. Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the package refer to Design Tip # 93-4 TJ 175C
VDD = 25V, starting TJ = 25C, L = 320H
RG = 25, IAS = 46A. (See Figure 12)
IRL3705N
1000
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTT OM 2.5V TOP
1000
ID , D ra in -to -S o u rc e C u rre n t (A )
100
ID , D ra in -to -S o u rc e C u rre n t (A )
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTT OM 2.5V TOP
100
10
10
2.5 V
2 .5V 20 s PU LSE W ID TH T J = 2 5C
0.1 1 10
1
A
1 0.1 1
20 s PU LSE W ID TH T J = 1 75C
10
A
100
100
V D S , Drain-to-Source V oltage (V )
V D S , Drain-to-Source V oltage (V )
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d )
I D = 77 A
I D , D r ain- to-S ourc e C urre nt (A )
2.5
TJ = 2 5 C
100
TJ = 1 7 5 C
2.0
1.5
10
1.0
0.5
1 2.0 3.0 4.0 5.0
V DS = 2 5 V 2 0 s P U L S E W ID T H
6.0 7.0 8.0
A
0.0 -60 -40 -20 0 20 40 60 80
V G S = 10 V
100 120 140 160 180
A
V G S , Ga te-to-S o urce V oltage (V )
T J , Junction T emperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRL3705N
6000
5000
4000
V G S , G a te -to -S o u rce V o lta g e (V )
V GS C iss C rs s C is s C os s
= = = =
0V , f = 1 MH z C gs + C gd , C ds SH O R TED C gd C ds + C gd
15
I D = 4 6A V DS = 4 4V V DS = 2 8V
12
C , C a p a c ita n c e (p F )
9
3000
C os s
6
2000
C rs s
1000
3
0 1 10 100
A
0 0 20 40 60
FO R TES T C IR CU IT SEE FIG U R E 13
80 100 120 140
A
V D S , D rain-to-S ource Voltage (V )
Q G , Total Gate Charge (nC )
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
I S D , R e v e rse D ra in C u rre n t (A )
OPE R ATIO N IN TH IS A RE A LIMITE D BY R D S(o n)
10 s 100 100 s
100
TJ = 1 75C T J = 2 5C
I D , D ra in C u rre n t (A )
1 ms 10 10m s
10 0.4 0.8 1.2 1.6 2.0
VG S = 0 V
2.4
A
1 1
T C = 25 C T J = 17 5C S ing le Pulse
10 100
2.8
A
V S D , S ource-to-Drain Voltage (V )
V D S , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRL3705N
100
LIMITED BY PACKAGE
80
VDS VGS RG
RD
D.U.T.
+
ID , Drain Current (A)
-VDD
60
5.0V
Pulse Width 1 s Duty Factor 0.1 %
40
Fig 10a. Switching Time Test Circuit
20
VDS 90%
0 25 50 75 100 125 150 175
TC , Case Temperature
( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
1
(Z thJC )
D = 0.50
0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
Thermal Response
0.1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRL3705N
800
E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
TO P BO TTOM
600
15 V
ID 1 9A 33A 46 A
VD S
L
D R IV E R
400
RG 10V tp
D .U .T IA S 0 .0 1
+ V - DD
A
200
Fig 12a. Unclamped Inductive Test Circuit
0
V D D = 2 5V
25 50 75 100 125 150
A
175
V (BR )D SS tp
Starting TJ , Junction T emperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
5.0 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRL3705N
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
IRL3705N
Package Outline
TO-220AB Outline Dimensions are shown in millimeters (inches)
2 . 8 7 ( .1 1 3 ) 2 . 6 2 ( .1 0 3 ) 1 0 . 5 4 (. 4 1 5 ) 1 0 . 2 9 (. 4 0 5 ) 3 . 7 8 (. 1 4 9 ) 3 . 5 4 (. 1 3 9 ) -A6 . 4 7 (. 2 5 5 ) 6 . 1 0 (. 2 4 0 ) -B4 . 6 9 ( .1 8 5 ) 4 . 2 0 ( .1 6 5 ) 1 .3 2 (. 0 5 2 ) 1 .2 2 (. 0 4 8 )
4 1 5 . 2 4 ( .6 0 0 ) 1 4 . 8 4 ( .5 8 4 )
1 . 1 5 ( .0 4 5 ) M IN 1 2 3
L E A D A S S IG N M E N T S 1 - G A TE 2 - D R AIN 3 - SO URCE 4 - D R AIN
1 4 . 0 9 (.5 5 5 ) 1 3 . 4 7 (.5 3 0 )
4 . 0 6 (. 1 6 0 ) 3 . 5 5 (. 1 4 0 )
3X
1 .4 0 (. 0 5 5 ) 1 .1 5 (. 0 4 5 )
0 . 9 3 ( .0 3 7 ) 3 X 0 . 6 9 ( .0 2 7 ) 0 .3 6 (. 0 1 4 ) M BA M
3 X 0 . 5 5 (. 0 2 2 ) 0 . 4 6 (. 0 1 8 ) 2 .9 2 (. 1 1 5 ) 2 .6 4 (. 1 0 4 )
2 . 5 4 ( .1 0 0 ) 2X NO TE S : 1 D I M E N S IO N I N G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L I N G D IM E N S IO N : I N C H
3 O U T L IN E C O N F O R M S T O J E D E C O U T L I N E T O -2 2 0 A B . 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
Part Marking Information
TO-220AB E XE X AM PLE T HI S IS IS NA N IRF 1010 AM PLE : : T HI S A IRF 1010 W IT H H SA S S E MB LY W IT A S E MB LY LOLO COCO DE 9B 1M T T DE 9B 1M
AA
IN TE TE R NA T ION A L IN R NA T ION A L R ECEC TIER R T IF IF IER IR F 1010 IR F 1010 LOLO GO GO 9246 9246 9B 9B 1M1M A SA S S EM B LY S EM B LY LOLO T COCO DE T DE
P AP A RT NU M BE R RT NU M BE R
D AD A TE ODOD E TE C C E (Y YW W )W ) (Y YW Y YY = YEYE A R Y = AR W W W W E EKEK W = = WE
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97

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